Philips PTN3501 Benutzerhandbuch

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Philips Semiconductors
Product specification
PTN3501
Maintenance and control device
2001 Jan 17
10
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.
SYMBOL
PARAMETER
MIN
MAX
UNIT
V
CC
Supply Voltage
–0.5
4.0
V
V
I
Input Voltage
V
SS 
 – 0.5
5.5
V
I
I
DC Input Current
–20
20
mA
I
O
DC Output Current
–25
25
mA
I
DD
Supply Current
–100
100
mA
I
SS
Supply Current
–100
100
mA
P
tot
Total Power Dissipation
400
mW
P
O
Total Power Dissipation per Output
100
mW
T
STG
Storage Temperature
–65
+150
_
C
T
AMB
Operating Temperature
–40
+85
_
C
V
ESD
Electrostatic Discharge:
Human Body Model, 1.5 k
Ω
, 100 pF
>2000
V
 
Machine Model, 0 
Ω
, 200 pF
>200
V
DC ELECTRICAL CHARACTERISTICS
T
amb
 = –40
_
C to +85
_
C unless otherwise specified; V
CC
 = 3.3 V
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
Supply
V
DD
Supply Voltage
2.5
3.3
3.6
V
I
DDQ
Standby Current; A
0
 thru A
5
, WC = HIGH
60
µ
A
I
DD1
Supply Current Read
1
mA
I
DD2
Supply Current Write
2
mA
V
POR
Power on Reset Voltage
2.4
V
Input SCL; input, output SDA
V
IL
Input LOW voltage
–0.5
0.3 V
DD
V
V
IH
Input HIGH voltage
0.7 V
DD
5.5
V
I
OL
Output LOW current @ V
OL 
= 0.4 V
3
mA
I
L
Input leakage current @ V
= V
DD
 or V
SS
–1
1
µ
A
C
I
Input capacitance @ V
I
 = V
SS
7
pF
I/O Expander Port
V
IL
Input LOW voltage
–0.5
0.3 V
DD
V
V
IH
Input HIGH voltage
0.7 V
DD
5.5
V
I
IHL(max)
Input current through protection diodes
–400
400
µ
A
I
OL
Output LOW current @ V
OL 
= 1 V
10
25
mA
I
OH
Output HIGH current @ V
OH 
= V
ss
30
100
300
µ
A
I
OHt
Transient pull–up current
2
mA
C
I
Input Capacitance
10
pF
C
O
Output Capacitance
10
pF
Address Inputs A
0
 thru A
5
, WC input
V
IL
Input LOW voltage
–0.5
0.3 V
DD
V
V
IH
Input HIGH voltage
0.7 V
DD
5.5
V
I
L
Input leakage current @ V
= V
DD
–1
1
µ
A
Input leakage (pull-up) current @ V
= V
SS
10
25
100
µ
A
Interrupt output INT
I
OL
Low level output current; V
OL
 = 0.4 V
1.6
mA
I
L
Leakage current @ V
I
 = V
DD
 or V
SS
–1
+1
µ
A