Super Talent Technology T667SC512 Benutzerhandbuch
200-Pin SODIMM DDR2 SDRAM
http://www.supertalent.com/oem
Products and Specifications discussed herein are subject to change without notice
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© 2006 Super Talent Tech., Corporation.
1.0 Feature
• JEDEC standard 1.8V +/- 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin,
400MHz fCK for 800Mb/sec/pin
• 4 Banks
• Posted CAS
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) –1
• Write Latency(WL) = Read Latency(RL) –1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• PASR(Partial Array Self Refresh)
• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C- support
High Temperature Self-Refresh rate enable feature
• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
• All of Lead-free products are compliant for RoHS
• Gold plated contacts