Fairchild Semiconductor N/A 2N5551TF Datenbogen
Produktcode
2N5551TF
2
N
5551 / MMBT5551 — NPN Ge
neral-Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N5551 / MMBT5551 Rev. 1.1.0
3
Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm
3
(3.0 inch
× 4.5 inch × 0.062 inch) with minimum land pattern size.
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
160
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
μA, I
E
= 0
180
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
μA, I
C
= 0
6.0
V
I
CBO
Collector Cut-Off Current
V
CB
= 120 V, I
E
= 0
50
nA
V
CB
= 120 V, I
E
= 0, T
A
= 100
°C
50
μA
I
EBO
Emitter Cut-Off Current
V
EB
= 4.0 V, I
C
= 0
50
nA
On Characteristics
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
80
I
C
= 10 mA, V
CE
= 5.0 V
80
250
I
C
= 50 mA, V
CE
= 5.0 V
30
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.15
V
I
C
= 50 mA, I
B
= 5.0 mA
0.20
V
V
BE(sat)
Base-Emitter On Voltage
I
C
= 10 mA, I
B
= 1.0 mA
1.0
V
I
C
= 50 mA, I
B
= 5.0 mA
1.0
V
Small-Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
100
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
6.0
pF
C
ibo
Input Capacitance
V
BE
= 0.5 V, I
C
= 0, f = 1.0 MHz
20
pF
H
fe
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V, f = 1.0 kHz
50
250
NF
Noise Figure
I
C
= 250
μA, V
CE
= 5.0 V,
R
S
=1.0 k
Ω, f=10 Hz to 15.7 kHz
8.0
dB