Fairchild Semiconductor N/A 2N3904TAR Datenbogen
Produktcode
2N3904TAR
2N3904 / MMBT3904 /
PZT3904 — NPN Genera
l Pur
p
ose Amplifier
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. B0
3
Typical Performance Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
- B
A
SE-
EMI
TTER
ON
VOL
T
A
GE (
V
)
BE
(O
N)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
ITT
ER VOL
T
A
G
E
(V
)
BESA
T
C
β
= 10
25 °C
125 °C
- 40 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V
- CO
LL
EC
T
O
R-
E
M
ITTE
R
VO
L
T
A
G
E
(V
)
CESA
T
25 °C
C
β
= 10
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
- C
O
LL
ECT
OR C
URR
ENT
(
n
A
)
A
V
= 30V
CB
CB
O
°
Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CIT
A
NCE (p
F
)
C obo
C ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1
1
10
100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TY
P
IC
A
L
P
U
L
S
E
D
C
U
R
R
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
β
β