Fairchild Semiconductor N/A BDW93CTU Datenbogen
Produktcode
BDW93CTU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Thermal Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
: BDW93A
: BDW93B
: BDW93C
45
60
80
60
80
100
V
V
V
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
: BDW93A
: BDW93B
: BDW93C
45
60
80
60
80
100
V
V
V
V
V
V
V
I
C
Collector Current (DC)
12
A
I
CP
*Collector Current (Pulse)
15
A
I
B
Base Current
0.2
A
P
C
Collector Dissipation (T
C
=25
°
C)
80
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Value
Units
R
θ
jc
Thermal Resistance
Junction to Case
1.5
°
C/W
BDW93/A/B/C
Hammer Drivers,
Audio Amplifiers Applications
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
1.Base 2.Collector 3.Emitter
1
TO-220