Hitachi Microscope & Magnifier S-3400N Benutzerhandbuch
1.1.1
1 - 1
1. SPECIFICATIONS AND INSTALLATION REQUIREMENTS
1.1 Specifications
1.1.1 Resolution
Secondary electron image resolution:
1.1.1 Resolution
Secondary electron image resolution:
3.0 nm (30 kV acceleration voltage, in high vacuum
mode)
10 nm (3 kV acceleration voltage, in high vacuum
mode)
Backscattered electron image resolution: 4.0 nm (30 kV acceleration voltage, in low vacuum
mode)
1.1.2 Magnification
5x to 300,000x
(Highest and lowest magnifications are dependent upon accelerating voltage, WD and scan
speed.)
1.1.3 Electron Optical System
Electron source:
Pre-centered cartridge type tungsten
hairpin
filament
Acceleration voltage:
0.3 kV to 30 kV
Gun bias:
Quad-/self-bias switching and continuously variable fixed bias
Beam alignment:
Electromagnetic two-stage deflection (doubles as blanking when the
image is frozen)
image is frozen)
Lens system:
Three-stage electromagnetic lens reduction optical system
Stigma correcting unit:
Electromagnetic 8-pole XY method
Scanning coil:
Two-stage electromagnetic deflection method
Movable objective aperture: Four-hole movable aperture (30, 50, 80, and 150 µm)
Image shift:
Image shift:
± 50 µm or greater (WD = 10 mm)
X-ray analysis position:
WD =10 mm, X-ray take-out angle (TOA) = 35°
Detector and image types: Secondary electron detector; secondary electron image (high
vacuum mode)
Quad-type semiconductor backscattered electron detector;
backscattered electron image (High/low vacuum mode)
backscattered electron image (High/low vacuum mode)