Cypress CY62128E User Manual
MoBL
®
CY62128E
Document #: 38-05485 Rev. *F
Page 3 of 12
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground
Supply Voltage to Ground
Potential............................... –0.5V to 6.0V (V
CC(max)
+ 0.5V)
DC Voltage Applied to Outputs
in High-Z State
.............. –0.5V to 6.0V (V
CC(max)
+ 0.5V)
DC Input Voltage
........... –0.5V to 6.0V (V
CC(max)
+ 0.5V)
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
Static Discharge Voltage........................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current..................................................... > 200 mA
Latch up Current..................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
CY62128ELL
Ind’l/Auto-A
–40°C to +85°C 4.5V to 5.5V
Auto-E
–40°C to +125°C
Electrical Characteristics
(Over the Operating Range)
Parameter
Description
Test Conditions
45 ns (Ind’l/Auto-A)
55 ns (Auto-E)
Unit
Min
Typ
Max
Min
Typ
Max
V
OH
Output HIGH
Voltage
I
OH
= –1 mA
2.4
2.4
V
V
OL
Output LOW
Voltage
I
OL
= 2.1 mA
0.4
0.4
V
V
IH
Input HIGH Voltage V
CC
= 4.5V to 5.5V
2.2
V
CC
+ 0.5 2.2
V
CC
+ 0.5
V
V
IL
Input LOW voltage V
CC
= 4.5V to 5.5V
–0.5
0.8
–0.5
0.8
V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
–1
+1
–4
+4
μA
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
, Output Disabled –1
+1
–4
+4
μA
I
CC
V
CC
Operating
Supply Current
f = f
max
= 1/t
RC
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
11
16
11
35
mA
f = 1 MHz
1.3
2
1.3
4
I
SB2
Automatic CE
Power down
Current—CMOS
Inputs
CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CC(max)
1
4
1
30
μA
Capacitance
(For all Packages)
Parameter
Description
Test Conditions
Max
Unit
C
IN
Input Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10
pF
C
OUT
Output Capacitance
10
pF
Notes
5. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
6. V
IH(max)
= V
CC
+ 0.75V for pulse durations less than 20 ns.
7. Full device AC operation assumes a 100
μs ramp time from 0 to V
CC
(min) and 200
μs wait time after V
CC
stabilization.
8. Only chip enables (CE
1
and CE
2
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
9. Tested initially and after any design or process changes that may affect these parameters.