Silicon Laboratories SI5322 User Manual

Page of 180
S i 5 3 x x - R M
32
Rev. 0.5
4.  Device Specifications
The following tables are intended to simplify device selection. The specifications in the individual device data
sheets take precedence over this document. Refer to the respective device data sheet for devices not listed in the
tables below.
Figure 16. Differential Voltage Characteristics
Figure 17. Rise/Fall Time Characteristics
Table 3. Recommended Operating Conditions
Parameter
Symbol Test Condition
Si53
16
Si53
22
Si53
24
Si53
25
Si53
65
Si53
66
Si53
67
Si53
68
Min Typ Max Unit
Ambient 
Temperature
T
A
–40
25
85
ºC
Supply Voltage 
During Normal 
Operation
V
DD
3.3 V Nominal
2.97 3.3
3.63
V
2.5 V Nominal
2.25 2.5
2.75
V
1.8 V Nominal
1.71 1.8
1.89
V
Note:
1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. 
Typical values apply at nominal supply voltages and an operating temperature of 25 ºC unless otherwise stated. 
2.  See Sections 6.7.1 and 8.2.1 for restrictions on output formats for TQFP devices at 3.3 V.
V
ISE
, V
OSE
V
ID
,V
OD
Differential I/Os
V
ICM
, V
OCM
Single-Ended
Peak-to-Peak Voltage
Differential Peak-to-Peak Voltage
SIGNAL +
SIGNAL –
(SIGNAL +) – (SIGNAL –)
V
t
SIGNAL +
SIGNAL –
V
ID
 = (SIGNAL+) – (SIGNAL–)
V
ICM
, V
OCM
t
F
t
R
80%
20%
CKIN, CKOUT