Kingston Technology 4GB DDR3 1333MHz Kit KVR1333D3E9S/4GEC Data Sheet
Product codes
KVR1333D3E9S/4GEC
KVR1333D3E9S/4GEC
4GB 2Rx8 512M x 72-Bit PC3-10600
CL9 240-Pin ECC DIMM
CL9 240-Pin ECC DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 72-bit (4GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, ECC
memory module, based on eighteen 256M x 8-bit DDR3-1333
FBGA components. The SPD is programmed to JEDEC stan-
dard latency DDR3-1333 timing of 9-9-9. This 240-pin DIMM
uses gold contact fingers. The electrical and mechanical
specifications are as follows:
FEATURES
•
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•
VDDQ = 1.5V (1.425V ~ 1.575V)
•
667MHz fCK for 1333Mb/sec/pin
•
8 independent internal bank
•
Programmable CAS Latency: 9, 8, 7, 6
•
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•
Bi-directional Differential Data Strobe
•
Thermal Sensor Grade B
•
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
•
On Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•
Asynchronous Reset
•
PCB: Height 1.18” (30mm), double sided component
Document No. VALUERAM0982-001.A00 06/02/11 Page 1
Memory Module Specifi cations
SDRAM SUPPORTED
Elpida (C-Die)
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power (Operating)
2.338 W*
UL Rating
94 V - 0
Operating Temperature
0
o
C to 85
o
C
Storage Temperature
-55
o
C to +100
o
C
*Power will vary depending on the SDRAM used.
Continued >>