Supermicro HMT41GV7BMR4C-H9 MEM-DR380L-HV01-ER13 Leaflet
Product codes
MEM-DR380L-HV01-ER13
HMT41GV7BMR4C-G7/H9
SERIAL PRESENCE DETECT
Function described
Function support
HEX
Function support
HEX
Function support
HEX
Function support
HEX
0
CRC Coverage/SPD Device Size/Number of Serial PD Bytes written
116/256/176 Bytes
92
116/256/176 Bytes
92
116/256/176 Bytes
92
116/256/176 Bytes
92
1
SPD Revision
1.0
10
1.0
10
1.0
10
1.0
10
2
DRAM Device Type
DDR3 SDRAM
0B
DDR3 SDRAM
0B
DDR3 SDRAM
0B
DDR3 SDRAM
0B
3
Module Type
Registered DIMM
01
Registered DIMM
01
Registered DIMM
01
Registered DIMM
01
4
SDRAM Density and Banks
8 banks, 2Gb
03
8 banks, 2Gb
03
8 banks, 2Gb
03
8 banks, 2Gb
03
5
SDRAM Addressing(Row/Column)
15 / 11
1A
15 / 11
1A
15 / 11
1A
15 / 11
1A
6
Module Nominal Voltage, VDD
Only 1.5V Operable
00
Only 1.5V Operable
00
Only 1.5V Operable
00
Only 1.5V Operable
00
7
Module Organization (rank / data bit width)
2rank/x4
08
2rank/x4
08
2rank/x4
08
2rank/x4
08
8
Module Memory Bus Width
ECC/ 72bit bus
0B
ECC/ 72bit bus
0B
ECC/ 72bit bus
0B
ECC/ 72bit bus
0B
9
Fine Timebase Dividened and Divisor
5ps / 2
52
5ps / 2
52
5ps / 2
52
5ps / 2
52
10
Medium Timebase Dividened
1ns
01
1ns
01
1ns
01
1ns
01
11
Medium Timebase Divisor
8
08
8
08
8
08
8
08
12
Minimum SDRAM Cycle Time(tCKmin)
1.875ns
0F
1.875ns
0F
1.5ns
0C
1.5ns
0C
13
Reserved
Blank
00
Blank
00
Blank
00
Blank
00
14
SDRAM CAS Latency Supported, Low Byte
6,7,8
1C
6,7,8
1C
6,7,8,9
3C
6,7,8,9
3C
15
~~~~SDRAM CAS Latency Supported, High Byte
Not support over CL=12
00
Not support over CL=12
00
Not support over CL=12
00
Not support over CL=12
00
16
Minimum CAS Latency Time(tAAmin)
13.125 ns
69
13.125 ns
69
13.125ns
69
13.125ns
69
17
Minimum Write Recovery Time(tWRmin)
15ns
78
15ns
78
15ns
78
15ns
78
18
Minimum /RAS to /CAS Delay (tRCDmin)
13.125 ns
69
13.125 ns
69
13.125ns
69
13.125ns
69
19
Minimun Row Active to Row Active Delay (tRRDmin)
7.5ns
3C
7.5ns
3C
6ns
30
6ns
30
20
Minimum Row Precharge Delay Time (tRPmin)
13.125 ns
69
13.125 ns
69
13.125ns
69
13.125ns
69
21
Upper Nibbles for tRAS and tRC
Refer to Byte22,23
11
Refer to Byte22,23
11
Refer to Byte22,23
11
Refer to Byte22,23
11
22
Minimum Active to Precharge Delay Time (tRASmin), Least Significant Byte
37.5 ns
2C
37.5 ns
2C
36ns
20
36ns
20
23
~~~~Minimum Active to Active/Refresh Delay Time (tRCmin), Least Significant Byte
50.625 ns
95
50.625 ns
95
49.125 ns
89
49.125 ns
89
24
Minimum Refresh Recovery Time(tRFCmin), Least Significant Byte
160ns
00
160ns
00
160ns
00
160ns
00
25
~~Minimum Refresh Recovery Time(tRFCmin), Least Significant Byte
160ns
05
160ns
05
160ns
05
160ns
05
26
Minimum Internal Write to Read Command Delay Time(tWTRmin)
7.5ns
3C
7.5ns
3C
7.5ns
3C
7.5ns
3C
27
Minimum Internal Read to Precharge Command Delay Time(tRTPmin)
7.5ns
3C
7.5ns
3C
7.5ns
3C
7.5ns
3C
28
Upper Nibble for tFAW
Refer to Byte29
01
Refer to Byte29
01
Refer to Byte29
00
Refer to Byte29
00
29
~~~~Minimum Four Active Window Delay Time(tFAW), Least Significant Byte
37.5 ns
2C
37.5 ns
2C
30 ns
F0
30 ns
F0
30
SDRAM Output DriverSupported
DLL Off, RZQ/6, RZQ/7
83
DLL Off, RZQ/6, RZQ/7
83
DLL Off, RZQ/6, RZQ/7
83
DLL Off, RZQ/6, RZQ/7
83
31
SDRAM Thermal and Refresh Options
ASR, Normal Temp
05
ASR, Normal Temp
05
ASR, Normal Temp
05
ASR, Normal Temp
05
32
Module Thermal Sensor
TS incorporated
80
TS incorporated
80
TS incorporated
80
TS incorporated
80
33
SDRAM Device Type
DDP
80
DDP
80
DDP
80
DDP
80
34~59
Reserved
Blank
00
Blank
00
Blank
00
Blank
00
60
Module Nominal Height of Unbuffered Dimm
19.4mm
05
19.4mm
05
19.4mm
05
19.4mm
05
61
Module Maximum Thickness of unbuffered DIMM
3~4mm
33
3~4mm
33
3~4mm
33
3~4mm
33
62
Reference Raw Card Used for unbuffered DIMM
rev 0.0 / RC N
0C
rev 0.0 / RC N
0C
rev 0.0 / RC N
0C
rev 0.0 / RC N
0C
63
DIMM Module Attributes
1Row 1Register
05
1Row 1Register
05
1Row 1Register
05
1Row 1Register
05
64
Heat Spreader Solution
Present
80
Present
80
Present
80
Present
80
65
Register Vendor ID (LSB)
Inphi
04
IDT
80
Inphi
04
IDT
80
66
Register Vendor ID (MSB)
Inphi
B3
IDT
B3
Inphi
B3
IDT
B3
67
Register Revision Number
GS-02 LV
11
B
61
GS-02 LV
11
B
61
68
Register Type
SSTE32882
00
SSTE32882
00
SSTE32882
00
SSTE32882
00
69
Register Control Word Function RC1 / RC0
rev 0.0 / RC N
00
rev 0.0 / RC N
00
rev 0.0 / RC N
00
rev 0.0 / RC N
00
70
Register Control Word Function RC 3 / RC 2
rev 0.0 / RC N
A0
rev 0.0 / RC N
A0
rev 0.0 / RC N
A0
rev 0.0 / RC N
A0
71
Register Control Word Function RC 5 / RC 4
rev 0.0 / RC N
55
rev 0.0 / RC N
55
rev 0.0 / RC N
55
rev 0.0 / RC N
55
72
Reserved
Blank
00
Blank
00
Blank
00
Blank
00
73
Reserved
Blank
00
Blank
00
Blank
00
Blank
00
74
Register Control Word Function RC11 / RC10
Inphi 1.5V for RC11
00
IDT 1.5V for RC11
00
Inphi 1.5V for RC11
00
IDT 1.5V for RC11
00
75~116
Reserved
Blank
00
Blank
00
Blank
00
Blank
00
117
Module Manufacturer JEDEC ID Code, Least Significant Byte
Hynix
80
Hynix
80
Hynix
80
Hynix
80
118
~~~~Module Manufacturer JEDEC ID Code, Most Significant Byte
Hynix
AD
Hynix
AD
Hynix
AD
Hynix
AD
119
Module Manufacturing location
Hynix(Ichon)
01
Hynix(Ichon)
01
Hynix(Ichon)
01
Hynix(Ichon)
01
120
Module Manufacturing Data (Year)
Variable
00
Variable
00
Variable
00
Variable
00
121
Module Manufacturing Data (Week)
Variable
00
Variable
00
Variable
00
Variable
00
122~125
Module Serial Number
Undefined
00
Undefined
00
Undefined
00
Undefined
00
126
Cyclical Redundancy Code
CRC cover 0~116 byte
9A
CRC cover 0~116 byte
82
CRC cover 0~116 byte
D8
CRC cover 0~116 byte
C0
127
~~~~Cyclical Redundancy Code
CRC cover 0~116 byte
AC
CRC cover 0~116 byte
92
CRC cover 0~116 byte
05
CRC cover 0~116 byte
3B
128
Manufacture part number ( Hynix Memory Module )
H
48
H
48
H
48
H
48
129
~~~~Manufacture part number ( Hynix Memory Module )
M
4D
M
4D
M
4D
M
4D
130
Component Group (DDR3 SDRAM)
T
54
T
54
T
54
T
54
131
Component Density
4
34
4
34
4
34
4
34
132
Manufacture part number ( Memory Depth )
1
31
1
31
1
31
1
31
133
~~~~Manufacture part number ( Memory Depth)
G
47
G
47
G
47
G
47
134
Manufacture part number ( Module type )
V
56
V
56
V
56
V
56
135
Manufacture part number ( Data width )
7
37
7
37
7
37
7
37
136
Manufacture part number ( Die generation)
B
42
B
42
B
42
B
42
137
Manufacture part number ( Package Type)
M
4D
M
4D
M
4D
M
4D
138
Manufacture part number ( Package Material)
R
52
R
52
R
52
R
52
139
Manufacture part number ( Component configuration)
4
34
4
34
4
34
4
34
140
Manufacture part number ( Power consumption & Temp.)
C
43
C
43
C
43
C
43
141
Manufacture part number ( Hyphen )
-
2D
-
2D
-
2D
-
2D
142
Manufacture part number ( Speed)
G
47
G
47
H
48
H
48
143
~~~~Manufacture part number ( Speed)
7
37
7
37
9
39
9
39
144
Manufacture part number
Blank
20
Blank
20
Blank
20
Blank
20
145
Manufacture part number
Blank
20
Blank
20
Blank
20
Blank
20
146
Module Revision Code
D
44
D
44
D
44
D
44
147
~~~Module Revision Code
2
32
7
37
2
32
7
37
148
DRAM Manufacturer JEDEC ID Code, Least Significant Byte
Hynix
80
Hynix
80
Hynix
80
Hynix
80
149
~~~~DRAM Manufacturer JEDEC ID Code, Most Significant Byte
AD
AD
AD
AD
150~175
Manufacturer's Specific Data
Blank
00
Blank
00
Blank
00
Blank
00
176~255
Open for customer use
Blank
00
Blank
00
Blank
00
Blank
00
H9 D2
H9 D7
G7 D7
G7 D2