STMicroelectronics M93C66-WMN6P Memory IC M93C66-WMN6P Data Sheet

Product codes
M93C66-WMN6P
Page of 33
This is information on a product in full production. 
November 2013
DocID4997 Rev 15
M93C86-x M93C76-x M93C66-x 
M93C56-x M93C46-x
16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit 
(8-bit or 16-bit wide) MICROWIRE serial access EEPROM
Datasheet 
-
 production data
          
Features
 Industry standard MICROWIRE bus
 Single supply voltage:
– 2.5 V to 5.5 V for M93Cx6-W
– 1.8 V to 5.5 V for M93Cx6-R
 Dual organization: by word (x16) or byte (x8)
 Programming instructions that work on: byte, 
word or entire memory
 Self-timed programming cycle with auto-erase: 
5 ms
 READY/BUSY signal during programming
 2 MHz clock rate
 Sequential read operation
 Enhanced ESD/latch-up behavior
 More than 4 million write cycles
 More than 200-year data retention
 Packages
– SO8, TSSOP8, UFDFPN8 packages: 
RoHS-compliant and Halogen-free 
(ECOPACK®)
– PDIP8 package: 
RoHS-compliant (ECOPACK1®)
          
          
PDIP8 (BN)
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
UFDFPN8 (MC)
2 x 3 mm
Table 1. Device summary
Reference
Part 
number
Memory 
size
Supply 
voltage
M93C46-x
M93C46-W
1 Kbit
2.5 V to 5.5 V
M93C46-R
1.8 V to 5.5 V
M93C56-x
M93C56-W
2 Kbit
2.5 V to 5.5 V
M93C56-R
1.8 V to 5.5 V
M93C66-x
M93C66-W
4 Kbit
2.5 V to 5.5 V
M93C66-R
1.8 V to 5.5 V
-
M93C76-R
8 Kbit
1.8 V to 5.5 V
M93C86-x
M93C86-W
16 Kbit
2.5 V to 5.5 V
M93C86-R
1.8 V to 5.5 V