Atmel Evaluation Kit AT91SAM9G25-EK AT91SAM9G25-EK Data Sheet

Product codes
AT91SAM9G25-EK
Page of 1102
1049
SAM9G25 [DATASHEET]
11032C–ATARM–25-Jan-13
46.7.1 32 kHz Crystal Characteristics
46.7.2 XIN32 Clock Characteristics
Note:
1. These characteristics apply only when the 32.768 kHz Oscillator is in bypass mode (i.e. when RCEN = 0, OSC32EN 
= 0, OSCSEL = 1 and OSC32BYP = 1) in the SCKCR register. See “Slow Clock Selection” in the PMC section.
Table 46-12. 32 kHz Crystal Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ESR
Equivalent Series Resistor Rs
Crystal @ 32.768 kHz
50
100
k
Ω
C
M
Motional Capacitance
Crystal @ 32.768 kHz
0.6
3
fF
C
S
Shunt Capacitance
Crystal @ 32.768 kHz
0.6
2
pF
I
DD ON
Current dissipation
R
S
 = 50 k
 C
CRYSTAL32 
= 6 pF
0.55
1.3
µA
R
S
 = 50 k
 C
CRYSTAL32 
= 12.5pF
0.85
1.6
µA
R
S
 = 100 k
 C
CRYSTAL32 
= 6 pF
0.7
2.0
µA
R
S
 = 100 k
 C
CRYSTAL32 
= 12.5 pF
1.1
2.2
µA
I
DD STDBY
Standby consumption
0.3
µA
Table 46-13. XIN32 Clock Characteristics
Symbol
Parameter
Conditions
Min
Max
Units
1/(t
CPXIN32
)
XIN32 Clock Frequency
44
kHz
t
CPXIN32
XIN32 Clock Period
22
µs
t
CHXIN32
XIN32 Clock High Half-period
11
µs
t
CLXIN32
XIN32 Clock Low Half-period
11
µs
t
CLCH32
XIN32 Clock Rise time
400
ns
t
CLCL32
XIN32 Clock Fall time
400
ns
C
IN32
XIN32 Input Capacitance
6
pF
R
IN32
XIN32 Pulldown Resistor
4
M
Ω
V
IN32
XIN32 Voltage
VDDBU
VDDBU
V
V
INIL32
XIN32 Input Low Level Voltage
-0.3
0.3 x V
VDDBU
V
V
INIH32
XIN32 Input High Level Voltage
0.7 x V
VDDBU
V
VDDBU
 + 0.3
V