Atmel Xplained Pro Evaluation Kit ATSAM4E-XPRO ATSAM4E-XPRO Data Sheet

SAM4E [DATASHEET]

Atmel-11157D-ATARM-SAM4E16-SAM4E8-Datasheet_12-Jun-14

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programmer writes to the first pages of the lock region using Flash write commands and writes to the last page of
the lock region using a Flash write and lock command.

The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command. However, before
programming the load buffer, the page is erased.

The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL commands.

This command is used to erase the Flash memory planes.

All lock regions must be unlocked before the Full Erase command by using the CLB command. Otherwise, the
erase command is aborted and no page is erased. 

Lock bits can be set using WPL or EWPL commands. They can also be set by using the Set Lock command
(SLB). With this command, several lock bits can be activated. A Bit Mask is provided as argument to the
command. When bit 0 of the bit mask is set, then the first lock bit is activated.

In the same way, the Clear Lock command (CLB) is used to clear lock bits.

Lock bits can be read using Get Lock Bit command (GLB). The n

th

 lock bit is active when the bit n of the bit mask

is set..

General-purpose NVM bits (GP NVM bits) can be set using the Set GPNVM command (SGPB). This command
also activates GP NVM bits. A bit mask is provided as argument to the command. When bit 0 of the bit mask is set,
then the first GP NVM bit is activated.

1

Write handshaking

CMDE

EA

2

Write handshaking

DATA

0

1

Write handshaking

CMDE

SLB or CLB

2

Write handshaking

DATA

Bit Mask

1

Write handshaking

CMDE

GLB

2

Read handshaking

DATA

Lock Bit Mask Status

0 = Lock bit is cleared

1 = Lock bit is set