Atmel Evaluation Kit AT91SAM9G25-EK AT91SAM9G25-EK Data Sheet
Product codes
AT91SAM9G25-EK
441
SAM9G25 [DATASHEET]
11032D–ATARM–10-Mar-2014
19. A mode Normal command is provided. Program the Normal mode into Mode Register (see
20. Perform a write access to any DDR2-SDRAM address.
21. Write the refresh rate into the count field in the Refresh Timer register (see
between refresh cycles). The DDR2-SDRAM device requires a refresh every 15.625
µ
s or 7.81
µ
s. With a 133
MHz frequency, the refresh timer count register must to be set with (15.625*133 MHz) = 2079 i.e. 0x081f or
(7.81*133 MHz) = 1039 i.e. 0x040f.
(7.81*133 MHz) = 1039 i.e. 0x040f.
After initialization, the DDR2-SDRAM devices are fully functional.
30.5
Functional Description
30.5.1 SDRAM Controller Write Cycle
The DDRSDRC allows burst access or single access in normal mode (mode = 000). Whatever the access type, the
DDRSDRC keeps track of the active row in each bank, thus maximizing performance.
DDRSDRC keeps track of the active row in each bank, thus maximizing performance.
The SDRAM device is programmed with a burst length equal to 8. This determines the length of a sequential data input
by the write command that is set to 8. The latency from write command to data input is fixed to 1 in the case of DDR-
SDRAM devices. In the case of SDR-SDRAM devices, there is no latency from write command to data input.
by the write command that is set to 8. The latency from write command to data input is fixed to 1 in the case of DDR-
SDRAM devices. In the case of SDR-SDRAM devices, there is no latency from write command to data input.
To initiate a single access, the DDRSDRC checks if the page access is already open. If row/bank addresses match with
the previous row/bank addresses, the controller generates a write command. If the bank addresses are not identical or if
bank addresses are identical but the row addresses are not identical, the controller generates a precharge command,
activates the new row and initiates a write command. To comply with SDRAM timing parameters, additional clock cycles
are inserted between precharge/active (t RP) commands and active/write (t RCD) command. As the burst length is fixed
to 8, in the case of single access, it has to stop the burst, otherwise seven invalid values may be written. In the case of
SDR-SDRAM devices, a Burst Stop command is generated to interrupt the write operation. In the case of DDR-SDRAM
devices, Burst Stop command is not supported for the burst write operation. In order to then interrupt the write operation,
Dm must be set to 1 to mask invalid data (see
the previous row/bank addresses, the controller generates a write command. If the bank addresses are not identical or if
bank addresses are identical but the row addresses are not identical, the controller generates a precharge command,
activates the new row and initiates a write command. To comply with SDRAM timing parameters, additional clock cycles
are inserted between precharge/active (t RP) commands and active/write (t RCD) command. As the burst length is fixed
to 8, in the case of single access, it has to stop the burst, otherwise seven invalid values may be written. In the case of
SDR-SDRAM devices, a Burst Stop command is generated to interrupt the write operation. In the case of DDR-SDRAM
devices, Burst Stop command is not supported for the burst write operation. In order to then interrupt the write operation,
Dm must be set to 1 to mask invalid data (see
continue to toggle.
To initiate a burst access, the DDRSDRC uses the transfer type signal provided by the master requesting the access. If
the next access is a sequential write access, writing to the SDRAM device is carried out. If the next access is a write non-
sequential access, then an automatic access break is inserted, the DDRSDRC generates a precharge command,
activates the new row and initiates a write command. To comply with SDRAM timing parameters, additional clock cycles
are inserted between precharge/active (tRP) commands and active/write (tRCD) commands.
the next access is a sequential write access, writing to the SDRAM device is carried out. If the next access is a write non-
sequential access, then an automatic access break is inserted, the DDRSDRC generates a precharge command,
activates the new row and initiates a write command. To comply with SDRAM timing parameters, additional clock cycles
are inserted between precharge/active (tRP) commands and active/write (tRCD) commands.
For a definition of timing parameters, refer to
Write accesses to the SDRAM devices are burst oriented and the burst length is programmed to 8. It determines the
maximum number of column locations that can be accessed for a given write command. When the write command is
issued, 8 columns are selected. All accesses for that burst take place within these eight columns, thus the burst wraps
within these 8 columns if a boundary is reached. These 8 columns are selected by addr[13:3]. addr[2:0] is used to select
the starting location within the block.
maximum number of column locations that can be accessed for a given write command. When the write command is
issued, 8 columns are selected. All accesses for that burst take place within these eight columns, thus the burst wraps
within these 8 columns if a boundary is reached. These 8 columns are selected by addr[13:3]. addr[2:0] is used to select
the starting location within the block.
In the case of incrementing burst (INCR/INCR4/INCR8/INCR16), the addresses can cross the 16-byte boundary of the
SDRAM device. For example, in the case of DDR-SDRAM devices, when a transfer (INCR4) starts at address 0x0C, the
next access is 0x10, but since the burst length is programmed to 8, the next access is at 0x00. Since the boundary is
reached, the burst is wrapping. The DDRSDRC takes this feature of the SDRAM device into account. In the case of
transfer starting at address 0x04/0x08/0x0C (DDR-SDRAM devices) or starting at address 0x10/0x14/0x18/0x1C, two
write commands are issued to avoid to wrap when the boundary is reached. The last write command is subject to DM
input logic level. If DM is registered high, the corresponding data input is ignored and write access is not done. This
avoids additional writing being done.
SDRAM device. For example, in the case of DDR-SDRAM devices, when a transfer (INCR4) starts at address 0x0C, the
next access is 0x10, but since the burst length is programmed to 8, the next access is at 0x00. Since the boundary is
reached, the burst is wrapping. The DDRSDRC takes this feature of the SDRAM device into account. In the case of
transfer starting at address 0x04/0x08/0x0C (DDR-SDRAM devices) or starting at address 0x10/0x14/0x18/0x1C, two
write commands are issued to avoid to wrap when the boundary is reached. The last write command is subject to DM
input logic level. If DM is registered high, the corresponding data input is ignored and write access is not done. This
avoids additional writing being done.