Atmel ARM-Based Evaluation Kit for SAM4S16C, 32-Bit ARM® Cortex® Microcontroller ATSAM4S-WPIR-RD ATSAM4S-WPIR-RD Data Sheet

SAM4S Series [DATASHEET]

Atmel-11100G-ATARM-SAM4S-Datasheet_27-May-14

1124

Note:

1. PA[4–11], PA[15–25], PB[0–9], PB[12–14], PC[0–31]
2. At power-up VDDIO needs to reach 0.6V before VDDIN reaches 1.0V
3. VDDIO voltage needs to be equal or below to (VDDIN voltage +0.5V)
4. The Flash programming characteristics are applicable at operating temperature range: T

A

 = -40°C to 85°C.

I

IH

Input High

Pull-down OFF

-1

—

1

µA

Pull-down ON

10

—

50

R

PULLUP

Pull-up Resistor

PA0–PA31, PB0–PB14, PC0–PC31
NRST

70

100

130

kΩ

R

PULLDO

WN

Pull-down Resistor

PA0–PA31, PB0–PB14, PC0–PC31
NRST

70

100

130

kΩ

R

ODT

On-die Series 

Termination Resistor

PA4–PA31, PB0–PB9, PB12–PB14, PC0–PC31
PA0–PA3

—

36
18

Ω

I

CC

Flash Active Current on 

VDDCORE

Random 144-bit Read @ 25°C :
Maximum read frequency at VDDCORE = 1.2V, 

VDDIO =3.3V 

—

16

25

mA

Random 72-bit Read @ 25°C:
Maximum read frequency at VDDCORE = 1.2V, 

VDDIO =3.3V  

—

10

18

Program 

onto VDDCORE = 1.2V, VDDIO = 

3.3V @ 25°C

—

3

5

I

CC33

Flash Active Current on 

VDDIO

Random 144-bit read:
Maximum read frequency at VDDCORE = 1.2V, 

VDDIO =3.3V  @ 25°C

—

3

16

mA

Random 72-bit read:
Maximum read frequency at VDDCORE = 1.2V, 

VDDIO =3.3V  @ 25°C

—

3

5

 onto VDDCORE = 1.2V, VDDIO = 

3.3V @ 25°C

—

10

15