Atmel ARM-Based Evaluation Kit for SAM4S16C, 32-Bit ARM® Cortex® Microcontroller ATSAM4S-WPIR-RD ATSAM4S-WPIR-RD Data Sheet
Product codes
ATSAM4S-WPIR-RD
1147
SAM4S Series [DATASHEET]
Atmel-11100G-ATARM-SAM4S-Datasheet_27-May-14
44.5.6 3 to 20 MHz Crystal Characteristics
44.5.7 3 to 20 MHz XIN Clock Input Characteristics in Bypass Mode
Note:
1. These characteristics apply only when the 3–20 MHz crystal oscillator is in bypass mode.
Table 44-30.
Crystal Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ESR
Equivalent Series Resistor (Rs)
Fundamental @ 3 MHz
Fundamental @ 8 MHz
Fundamental @ 12 MHz
Fundamental @ 16 MHz
Fundamental @ 20 MHz
Fundamental @ 8 MHz
Fundamental @ 12 MHz
Fundamental @ 16 MHz
Fundamental @ 20 MHz
—
—
200
100
100
80
80
50
80
50
Ω
C
M
Motional Capacitance
—
—
8
fF
C
SHUNT
Shunt Capacitance
—
—
7
pF
Table 44-31.
XIN Clock Electrical Characteristics (In Bypass Mode)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
1/(t
CPXIN
)
XIN Clock Frequency
—
—
50
MHz
t
CPXIN
XIN Clock Period
20
—
—
ns
t
CHXIN
XIN Clock High Half-period
8
—
—
ns
t
CLXIN
XIN Clock Low Half-period
8
—
—
ns
t
CLCH
Rise Time
2.2
—
—
ns
t
CHCL
Fall Time
2.2
—
—
ns
V
XIN_IL
V
XIN
Input Low-level Voltage
-0.3 —
[0.8V:0.3
x V
VDDIO]
V
V
XIN_IH
V
XIN
Input High-level Voltage
[2.0V:0.7
x V
VDDIO ]
—
V
VDDIO
+0.3V
V
C
PARASTANDBY
Internal Parasitic During Standby
—
5.5
6.3
pF
R
PARASTANDBY
Internal Impedance During Standby
—
300
—
Ω
t
CPXIN
t
CPXIN
t
CPXIN
t
CHXIN
t
CLCH
t
CHCL
V
XIN_IL
V
XIN_IH