Atmel ARM-Based Evaluation Kit for SAM4S16C, 32-Bit ARM® Cortex® Microcontroller ATSAM4S-WPIR-RD ATSAM4S-WPIR-RD Data Sheet
Product codes
ATSAM4S-WPIR-RD
1151
SAM4S Series [DATASHEET]
Atmel-11100G-ATARM-SAM4S-Datasheet_27-May-14
44.7.2 Electrical Parameters
44.7.3 Switching Characteristics
Table 44-34.
Electrical Parameters
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Input Levels
V
IL
Low Level
—
—
0.8
V
V
IH
High Level
2.0
—
—
V
V
DI
Differential Input Sensitivity
|(D+) - (D-)|
0.2
—
—
V
V
CM
Differential Input Common Mode
Range
0.8
—
2.5
V
C
IN
Transceiver Capacitance
Capacitance to ground on each line
—
9.18
pF
I
Hi-Z State Data Line Leakage
0V < V
IN
< 3.3V
-10
—
+10
µA
R
EXT
Recommended External USB
Series Resistor
In series with each USB pin with ± 5 %
—
27
—
Ω
Output Levels
V
OL
Low Level Output
Measured with R
L
of 1.425 kΩ tied to
3.6V
0.0
—
0.3
V
V
OH
High Level Output
Measured with R
L
of 14.25 kΩ tied to
GND
2.8
—
3.6
V
V
CRS
Output Signal Crossover Voltage
Measurement conditions described in
1.3
—
2.0
V
Consumption
I
VDDIO
Current Consumption
Transceiver enabled in input mode
DDP = 1 and DDM = 0
—
105
200
µA
I
VDDCORE
Current Consumption
—
80
150
µA
Pull-up Resistor
R
PUI
Bus Pull-up Resistor on
Upstream Port (idle bus)
0.900
—
1.575
kΩ
R
PUA
Bus Pull-up Resistor on
Upstream Port (upstream port
receiving)
1.425
—
3.090
kΩ
Table 44-35.
In Full Speed
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
t
FR
Transition Rise Time
C
LOAD
= 50 pF
4
—
20
ns
t
FE
Transition Fall Time
C
LOAD
= 50 pF
4
—
20
ns
t
FRFM
Rise/Fall Time Matching
90
—
111.11
%