Fairchild Semiconductor N/A BCW66G Data Sheet

©2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002

T

C

=25

°

C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

C

=25

°

C unless otherwise noted

V

CEO

Collector-Emitter Voltage

45

V

V

CBO

Collector-Base Voltage

75

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current

- Continuous

1

A

T

J

, T

STG

Operating and Storage Junction Temperature Range

- 55 ~ +150

°

C

BV

CBO

Collector-Base Breakdown Voltage

I

C

 = 10

µ

A

75

V

BV

CEO

Collector-Emitter Breakdown Voltage 

I

C

 = 10mA

45

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

 = 10

µ

A

5

V

I

CES

Collector Cut-off Current

V

CB

 = 45V, I

E

 = 0

V

CB

 = 45V, I

E

 = 0

T

A

 = 150

°

C

20

nA

20

µ

A

I

EBO

Emitter Cut-off Current

V

EB

 = 4V

20

nA

h

FE

DC Current Gain

V

CE

 = 10V, I

C

 = 100

µ

A

V

CE

 = 1V, I

C

 = 10mA

V

CE

 = 1V, I

C

 = 100mA

V

CE

 = 2V, I

C

 = 500mA

50

110
160

60

400

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

 = 100mA, I

B

 = 10mA

I

C

 = 500mA, I

B

 = 50mA

0.3
0.7

V

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C

 = 500mA, I

B

 = 50mA

2

V

C

obo

Output Capacitance

V

CB

 = 10V, f = 1MHz

12

pF

C

ibo

Input Capacitance

V

EB

 = 0.5V, f = 1MHz

80

pF

f

T

Current gain Bandwidth Product

V

CE

 = 10V, I

C

 = 20mA, 

f = 100MHz

100

MHz

NF

Noise Figure

V

CE

 = 5V, I

C

 = 0.2mA, R

S

 = 1k

Ω

, 

f = 1KHz, BW = 200Hz

10

dB

t

on

Turn-On Time

I

B1

 = I

B2

 = 15mA

I

C

 = 150mA, R

L

 = 150

Ω

100

ns

t

off

Turn-Off Time

400

• This device is designed for general purpose amplifier applications at 

collector currents to 500mA.

• Sourced from process 13.

SOT-23

1. Base  2. Emitter  3. Collector 

1

2

3