Fairchild Semiconductor N/A BCP52 Data Sheet
Product codes
BCP52
BCP52 — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BCP52 Rev. 1.1.0
2
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. PCB size: FR-4, 76 mm
x 114 mm
x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
P
D
Total Device Dissipation
1.5
W
Derate Above 25°C
12
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient
83.3
°C/W
Symbol
Parameter
Conditions
Min.
Max.
Unit
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0
-60
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
μA, I
E
= 0
-60
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -10
μA, I
C
= 0
-5.0
V
I
CBO
Collector-Base Cut-Off Current
V
CB
= -30 V, I
E
= 0
-100
nA
V
CB
= -30 V, I
E
= 0, T
A
= 125°C
-10
μA
I
EBO
Emitter-Base Cut-Off Current
V
EB
= -5.0 V, I
C
= 0
-10
μA
h
FE
DC Current Gain
I
C
= -5.0 mA, V
CE
= -2.0 V
25
I
C
= -150 mA, V
CE
= -2.0 V
40
250
I
C
= -500 mA, V
CE
= -2.0 V
25
V
CE
(sat) Collector-Emitter Saturation Voltage
I
C
= -500 mA, I
B
= -50 mV
-0.5
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -500 mA, V
CE
= -2.0 V
-1.0
V