Fairchild Semiconductor N/A 2N3906TF Data Sheet
Product codes
2N3906TF
2
N
3906 / MMBT3906 / PZT
3906 —
P
N
P Gen
e
ra
l-Purpose
l-Purpose
Amplifier
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
3
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width
≤ 300 μs, duty cycle ≤ 2.0%.
Symbol
Parameter
Conditions
Min.
Max.
Unit
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
Voltage
(4)
I
C
= -1.0 mA, I
B
= 0
-40
V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= -10
μA, I
E
= 0
-40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -10
μA, I
C
= 0
-5.0
V
I
BL
Base Cut-Off Current
V
CE
= -30 V, V
BE
= 3.0 V
-50
nA
I
CEX
Collector Cut-Off Current
V
CE
= -30 V, V
BE
= 3.0 V
-50
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
(4)
I
C
= -0.1 mA, V
CE
= -1.0 V
60
I
C
= -1.0 mA, V
CE
= -1.0 V
80
I
C
= -10 mA, V
CE
= -1.0 V
100
300
I
C
= -50 mA, V
CE
= -1.0 V
60
I
C
= -100 mA, V
CE
= -1.0V
30
V
CE
(sat)
Collector-Emitter Saturation
Voltage
Voltage
I
C
= -10 mA, I
B
= -1.0 mA
-0.25
V
I
C
= -50 mA, I
B
= -5.0 mA
-0.40
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -10 mA, I
B
= -1.0 mA
-0.65
-0.85
V
I
C
= -50 mA, I
B
= -5.0 mA
-0.95
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= -10 mA, V
CE
= -20 V,
f = 100 MHz
250
MHz
C
obo
Output Capacitance
V
CB
= -5.0 V, I
E
= 0,
f = 100 kHz
4.5
pF
C
ibo
Input Capacitance
V
EB
= -0.5 V, I
C
= 0,
f = 100 kHz
10.0
pF
NF
Noise Figure
I
C
= -100
μA, V
CE
= -5.0 V,
R
S
= 1.0 k
Ω,
f = 10 Hz to 15.7 kHz
4.0
dB
SWITCHING CHARACTERISTICS
t
d
Delay Time
V
CC
= -3.0 V, V
BE
= -0.5 V
I
C
= -10 mA, I
B1
= -1.0 mA
35
ns
t
r
Rise Time
35
ns
t
s
Storage Time
V
CC
= -3.0 V, I
C
= -10 mA,
I
B1
= I
B2
= -1.0 mA
225
ns
t
f
Fall Time
75
ns