Fairchild Semiconductor N/A KSH200TF Data Sheet

© 2010 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

KSH200 Rev. B0

1 

August 2010

• D-PAK for Surface Mount Applications
• High DC Current Gain
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)

T

a

 = 25°C unless otherwise noted

T

a

 = 25°C unless otherwise noted

* Pulse test: PW ≤ 300

μs, Duty Cycle ≤ 2% Pulsed

V

CBO

Collector-Base Voltage

40

V

V

CEO

Collector-Emitter Voltage

25

V

V

EBO

Emitter-Base Voltage

8

V

I

C

Collector Current (DC)

5

A

I

CP

Collector Current (Pulse)

10

A

I

B

Base Current

1

A

P

C

Collector Dissipation (T

c

 = 25°C)

12.5

W

Collector Dissipation (T

a

 = 25°C)

1.4

W

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature

-55 to 150

°C

BV

CEO

(sus)

* Collector Emitter Sustaining Voltage I

C

 = 100mA, I

B

 = 0

25

V

I

CBO

Collector Cut-off Current

V

CB

 = 40V, I

E

 = 0

100

nA

I

EBO

Emitter Cut-off Current

V

EB

 = 8V, I

C

 = 0

100

nA

h

FE

* DC Current Gain

V

CE

 = 1V, I

C

 = 500mA

V

CE

 = 1V, I

C

 = 2A

V

CE

 = 2V, I

C

 = 5A

70
45
10

180

V

CE

(sat)

* Collector-Emitter Saturation Voltage I

C

 = 500mA, I

B

 = 50mA

I

C

 = 2A, I

B

 = 200mA

I

C

 = 5A, I

B

 = 1A

0.3

0.75

1.8

V
V
V

V

BE

(sat)

* Base-Emitter Saturation Voltage

I

C

 = 5A, I

B

 = 1A

2.5

V

V

BE

(on)

* Base-Emitter On Voltage

V

CE

 = 1V, I

C

 = 2A

1.6

V

f

T

Current Gain Bandwidth Product

V

CE

 = 10V, I

C

 = 100mA

65

MHz

C

ob

Output Capacitance

V

CB

 = 10V, I

E

 = 0, f = 0.1MHz

80

pF

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

1