Fairchild Semiconductor N/A KSC5338DTU Data Sheet

© 2010 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

KSC5338D/KSC5338DW Rev. B1

1 

May 2010

• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D

2

-PAK

Absolute Maximum Ratings  

T

a

=25°C unless otherwise noted

* Pulse Test : Pulse Width = 5ms, Duty Cycle 

≤ 10%

V

CBO

 Collector-Base Voltage

1000

V

V

CEO

 Collector-Emitter Voltage

450

V

V

EBO

 Emitter-Base Voltage

12

V

I

C

 Collector Current (DC)

5

A

I

CP

 *Collector Current (Pulse)

10

A

I

B

 Base Current (DC)

2

A

I

BP

 *Base Current (Pulse)

4

A

P

C

 Power Dissipation (T

C

=25

°C)

75

W

T

J

 Junction Temperature

150

°C

T

STG

 Storage Temperature

- 55 to 150

°C

R

θjc

Thermal Resistance 

Junction to Case

1.65

°C/W

R

θja

Junction to Ambient

62.5

°C/W

T

L

Maximum Lead Temperature for Soldering 

270

°C

C

B

E

Equivalent Circuit

1

D

2

-PAK

TO-220

1.Base    2.Collector    3.Emitter

1