Fairchild Semiconductor N/A KSC5027OTU Data Sheet
Product codes
KSC5027OTU
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC502
7
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
1100
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current (DC)
3
A
I
CP
Collector Current (Pulse)
10
A
I
B
Base Current
1.5
A
P
C
Collector Dissipation ( T
C
=25
°
C)
50
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 1mA, I
E
= 0
1100
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA, I
B
= 0
800
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA, I
C
= 0
7
V
V
CEX
(sus)
Collector-Emitter Sustaining Voltage
I
C
= 1.5A, I
B1
= -I
B2
= 0.3A
L = 2mH, Clamped
800
V
I
CBO
Collector Cut-off Current
V
CB
= 800V, I
E
= 0
10
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
10
µ
A
h
FE1
h
FE2
DC Current Gain
V
CE
= 5V, I
C
= 0.2A
V
CE
= 5V, I
C
= 1A
10
8
40
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 1.5A, I
B
= 0.3A
2
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 1.5A, I
B
= 0.3A
1.5
V
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 1MHz
60
pF
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 0.2A
15
MHz
t
ON
Turn ON Time
V
CC
= 400V
I
C
= 5I
B1
= -2.5I
B2
= 2A
R
L
= 200
Ω
0.5
µ
s
t
STG
Storage Time
3
µ
s
t
F
Fall Time
0.3
µ
s
Classification
N
R
O
h
FE1
10 ~ 20
15 ~ 30
20 ~ 40
KSC5027
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
• Wide SOA
1.Base 2.Collector 3.Emitter
1
TO-220