STMicroelectronics N/A BD 677 NPN Case type SOT 32 I(C) 4 A BD677A Data Sheet
Product codes
BD677A
BD677/A/679/A/681
BD678/A/680/A/682
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
■
SGS-THOMSON PREFERRED SALESTYPES
■
COMPLEMENTARY PNP - NPN DEVICES
■
MONOLITHIC DARLINGTON
CONFIGURATION
CONFIGURATION
■
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
COLLECTOR-EMITTER DIODE
APPLICATION
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
EQUIPMENT
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A,
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A,
BD680,
BD680A
and
BD682
respectively.
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ.= 7K
Ω
R
2
T yp. = 230
Ω
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
NPN
BD677/A
BD679/A
BD681
PNP
BD678/A
BD680/A
BD682
V
CBO
Collector-Base Voltage (I
E
= 0)
60
80
100
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
60
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current
6
A
I
B
Base Current
0.1
A
P
t ot
Tot al Dissipation at T
c
≤
25
o
C
40
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
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