Nxp Semiconductors N/A BCP 69-16 PNP Case type SOT 223 I(C) BCP69-16 Data Sheet
Product codes
BCP69-16
1999 Apr 08
2
Philips Semiconductors
Product specification
PNP medium power transistor
BCP69
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 20 V).
APPLICATIONS
•
General purpose switching and amplification
•
Power applications such as audio output stages.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BCP68.
package. NPN complement: BCP68.
PINNING
PIN
DESCRIPTION
1
base
2, 4
collector
3
emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM288
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
−
−
32
V
V
CEO
collector-emitter voltage
open base
−
−
20
V
V
EBO
emitter-base voltage
open collector
−
−
5
V
I
C
collector current (DC)
−
−
1
A
I
CM
peak collector current
−
−
2
A
I
BM
peak base current
−
−
200
mA
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
−
1.35
W
T
stg
storage temperature
−
65
+150
°
C
T
j
junction temperature
−
150
°
C
T
amb
operating ambient temperature
−
65
+150
°
C