Nxp Semiconductors BU2708AF BU Transistor NPN SOT 199 8A 825V BU2708AF Data Sheet
Product codes
BU2708AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 6 V; I
C
= 0 A
-
-
70
µ
A
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
825
900
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 1.33 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 1.33 A
0.83
0.91
1.00
V
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
-
21
-
h
FE
I
C
= 4 A; V
CE
= 1 V
3
6
7.3
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (line deflection
I
Csat
= 4 A; I
B(end)
= 0.8 A; -I
BM
= I
CM
/2;
circuit 16 kHz)
L
B
= 6
µ
H; -V
BB
= 4 V; L
C
= 1 mH;
C
FB
= 12.2 nF
t
s
Turn-off storage time
4.8
5.5
µ
s
t
f
Turn-off fall time
0.4
0.52
µ
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200