Nxp Semiconductors BU2525AW BU Transistor NPN SOT 429 (TO 247) 12A 800V BU2525AW Data Sheet
Product codes
BU2525AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525AW
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit (BU2525A).
Fig.6. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
IC
IB
VCE
ICsat
IBend
32us
13us
10us
t
t
t
TRANSISTOR
DIODE
0.1
10
IC / A
hFE
BU2525A
100
10
1
100
1
Tj = 25 C
Tj = 125 C
5 V
1 V
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
1
10
IC / A
VBESAT / V
BU2525A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
+ 150 v nominal
adjust for ICsat
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
10
IC / A
VCESAT / V
BU2525A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
1
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
September 1997
3
Rev 1.100