Nxp Semiconductors BU2507DX BU Transistor NPN SOT 399 (TOP 3D) 8A 700V BU2507DX Data Sheet
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Product codes
BU2507DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
160
-
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
R
be
Base-emitter resistance
V
EB
= 7.5 V
-
45
-
Ω
V
CEsat
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 0.8 A
-
5
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4 A; I
B
= 0.8 A
-
-
1.1
V
h
FE
DC current gain
I
C
= 1 A; V
CE
= 5 V
-
14
-
h
FE
I
C
= 4 A; V
CE
= 5 V
5
7
9
V
F
Diode forward voltage
I
F
= 4 A
-
1.7
2.0
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
68
-
pF
Switching times (16 kHz line
I
Csat
= 4 A; I
B(end)
= 0.7 A; L
B
= 6
µ
H;
deflection circuit)
-V
BB
= 4 V
t
s
Turn-off storage time
5.0
6.0
µ
s
t
f
Turn-off fall time
0.25
0.5
µ
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200