Nxp Semiconductors BU2725DX BU Transistor NPN SOT 399 (TOP 3D) 12A 825V BU2725DX Data Sheet
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Product codes
BU2725DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤
65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 ˚C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
110
-
mA
B
VEBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
R
EB
Base-emitter resistance
V
EB
= 7.5 V
70
Ω
V
CEsat
Collector-emitter saturation voltage
I
C
= 7.0 A; I
B
= 1.75 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 7.0 A; I
B
= 1.75 A
0.78
0.86
0.95
V
V
F
Diode forward voltage
I
F
= 7 A
1.4
2.2
V
h
FE
DC current gain
I
C
= 1 A; V
CE
= 5 V
-
19
-
h
FE
I
C
= 7 A; V
CE
= 1 V
3.8
5.8
7.8
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16 kHz line
I
Csat
= 7.0 A; L
C
= 650
µ
H; C
fb
= 18 nF;
deflection circuit)
V
CC
= 162 V; I
B(end)
= 1.5 A; L
B
= 2
µ
H;
-V
BB
= 4 V
t
s
Turn-off storage time
5.8
6.5
µ
s
t
f
Turn-off fall time
0.6
0.8
µ
s
2 Measured with half sine-wave voltage (curve tracer).
August 2002
2
Rev 2.000