Nxp Semiconductors BU2523AF BU Transistor NPN SOT 199 11A 800V BU2523AF Data Sheet
Product codes
BU2523AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
Fig.3. Switching times test circuit.
Fig.4. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 1 V
Fig.5. High and low DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical losses.
P
TOT
= f (I
B
); I
C
=5.5 A; f = 64 kHz
+ 150 v nominal
adjust for ICsat
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
1
10
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
Ths = 85 C
IC/IB = 10
IC/IB = 5
VCEsat / V
BU2523AF/X
IC / A
BU2523AF/X
0.01
0.1
1
10
100
1
10
100
VCE = 1 V
Ths = 25 C
Ths = 85 C
Ths = 85 C
hFE
IC / A
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
VBEsat / V
BU2523AF/X
IB / A
IC = 6 A
IC = 4.5 A
Ths = 25 C
Ths = 85 C
Ths = 85 C
BU2523AF/X
0.01
0.1
1
10
100
1
10
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
Ths = 85 C
hFE
IC / A
BU2523AF/DF/AX/DX
0
0.5
1
1.5
2
1
10
100
PTOT / W
IB / A
Ths = 25 C
Ths = 85 C
Ths = 85 C
September 1997
3
Rev 1.100