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Nxp Semiconductors BU2515AF BU Transistor NPN SOT 199 9A 800V BU2515AF Data Sheet

Product codes
BU2515AF
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Page of 6
Philips Semiconductors
 Product specification
 Silicon Diffused Power Transistor
BU2515AF 
Fig.3.   Switching times test circuit.
Fig.4.   High and low DC current gain. h
FE
 = f (I
C
)
V
CE
 = 1 V
Fig.5.   High and low DC current gain. h
FE
 = f (I
C
)
V
CE
 = 5 V
Fig.6.   Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.7.   Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8.   Typical losses.
P
TOT
 = f (I
B
); I
C
 = 4.5 A; f = 56 kHz
+ 150 v nominal 
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
1
10
100
0.01
0.1
1
10
Ths = 25 C
Ths = 85 C
IC/IB = 10
IC/IB = 5
VCEsat / V
BU2515AF/X
IC / A
0.01
0.1
1
10
100
1
10
100
VCE = 1 V
Ths = 25 C
Ths = 85 C
hFE
BU2515AF/X
IC / A
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
VBEsat / V
BU2515AF/AX
IB / A
IC = 6 A
IC = 4 A
Ths = 25 C
Ths = 85 C
0.01
0.1
1
10
100
1
10
100
VCE = 5 V
Ths = 25 C
Ths = 85 C
hFE
BU2515AF/X
IC / A
0
0.5
1
1.5
2
1
10
100
PTOT / W
BU2515AF/DF/AX/DX
IB / A
Ths = 25 C
Ths = 85 C
September 1997
3
Rev 1.100