Fairchild Semiconductor N/A TIP105TU Data Sheet
Product codes
TIP105TU
T
IP
1
05
/T
IP
1
06
/T
IP
1
07
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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP105/TIP106/TIP107 Rev. 1.0.0
1
October 2008
TIP105/TIP106/TIP107
PNP Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
• High DC Current Gain : h
FE
=1000 @ V
CE
= -4V, I
C
= -3A (Min.)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP100/101/102
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP100/101/102
Absolute Maximum Ratings*
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage : TIP105
: TIP106
: TIP107
: TIP107
- 60
- 80
- 80
- 100
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP105
: TIP106
: TIP107
: TIP107
- 60
- 80
- 80
- 100
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 8
A
I
CP
Collector Current (Pulse)
- 15
A
I
B
Base Current (DC)
- 1
A
P
C
Collector Dissipation (T
a
=25
°C)
2
W
Collector Dissipation (T
C
=25
°C)
80
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 ~ 150
°C
1.Base 2.Collector 3.Emitter
1
TO-220
R1
10k
W
@
R2
0.6k
W
@
Equivalent Circuit
B
E
C
R1
R2