Fairchild Semiconductor N/A KSB1017YTU Data Sheet
Product codes
KSB1017YTU
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB101
7
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 80
V
V
CEO
Collector-Emitter Voltage
- 80
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current
- 4
A
I
B
Base Current
- 0.4
A
P
C
Collector Dissipation ( T
C
=25
°
C)
25
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= - 50mA, I
B
= 0
-80
V
I
CBO
Collector Cut-off Current
V
CB
= - 80V, I
E
= 0
- 30
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 100
µ
A
h
FE1
h
FE2
DC Current Gain
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
40
15
15
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= - 3A, I
B
= - 0.3A
- 1
- 1.7
V
V
BE
(on)
Base-Emitter ON Voltage
V
CE
= - 5V, I
C
= - 3A
- 1
- 1.5
V
f
T
Current Gain Bandwidth Product
V
CE
= - 5V, I
C
= - 0.5A
9
MHz
C
ob
Output Capacitance
V
CB
= - 10V, f = 1MHz
130
pF
Classification
R
O
Y
h
FE1
40 ~ 80
70 ~ 140
120 ~ 240
KSB1017
Power Amplifier Applications
• Complement to KSD1408
1
1.Base 2.Collector 3.Emitter
TO-220F