Fairchild Semiconductor N/A MMBT4400 Data Sheet

This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. 

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TA = 25°C unless otherwise noted

V

CEO

Collector-Emitter Voltage

40

V

V

CBO

Collector-Base Voltage

60

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C

Collector Current - Continuous

600                          mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

P

D

Total Device Dissipation

Derate above 25

°

C

625

5.0

350

2.8

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

357

°

C/W

 

2001 Fairchild Semiconductor Corporation

2N4400/MMBT4400, Rev A