Fairchild Semiconductor N/A BSP52 Data Sheet

©2002 Fairchild Semiconductor Corporation

Rev. A, June 2002

T

A

=25

°

C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150

°

C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

A

=25

°

C unless otherwise noted

T

A

=25

°

C unless otherwise noted

V

CES

Collector-Emitter Voltage

80

V

V

CBO

Collector-Base Voltage

90

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current

- Continuous

800

mA

T

J

, T

STG

Operating and Storage Junction Temperature Range

- 55 ~ +150

°

C

V

(BR)CBO

Collector-Base Breakdown Voltage 

I

C

 = 100

µ

A, I

E

 = 0

90

V

V

(BR)EBO

Emitter-Base Breakdown Voltage 

I

E

 = 10

µ

A, I

C

 = 0

5

V

I

CES

Collector Cutoff Current

V

CE

 = 80V, V

BE

 = 0

10

µ

A

I

EBO

Emitter Cutoff Current

V

EB

 = 4.0V, I

C

 = 0

10

µ

A

h

FE

DC Current Gain 

I

C

 = 150mA, V

CE

 = 10V

I

C

 = 500mA, V

CE

 = 10V 

1000
2000

V

CE

(sat)

Collector-Emitter Saturation Voltage 

I

C

 = 500mA, I

B

 = 0.5mA

1.3

V

V

BE

(sat)

Base-Emitter Saturation Voltage 

I

C

 = 500mA, I

B

 = 0.5mA

1.9

V

P

D

Total Device Dissipation
Derate above 25

°

C

1000

8.0

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

125

°

C/W

• This device is designed for applications requiring extremly high current 

gain at collector currents to 500mA.

• Sourced from process 03.

SOT-223

1

2

4

3

1. Base  2. Collector   3. Emitter