Fairchild Semiconductor N/A MMBT4126 Data Sheet
Product codes
MMBT4126
2N4126
MMBT4126
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switch-
ing applications at collector currents to 10
ing applications at collector currents to 10
µ
A as a switch and to
100 mA as an amplifier.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA= 25°C unless otherwise noted
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
25
V
V
CBO
Collector-Base Voltage
25
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Symbol
Characteristic
Max
Units
2N4126
*MMBT4126
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case
83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
200
357
°
C/W
C
B
E
TO-92
C
B
E
SOT-23
Mark: ZF
2001 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
2N4126 / MMBT4126
2N4126/MMBT4126, Rev A