Fairchild Semiconductor N/A FSB660A Data Sheet

© 2001 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

FSB660A Rev. 1.1.0

1 

January 2014

(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at Values are at T

A

 = 25°C unless otherwise noted. 

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or 

    low-duty cycle operations.

FSB660A

660A

SSOT 3L

Tape and Reel

V

CEO

Collector-Emitter Voltage

-60

V

V

CBO

Collector-Base Voltage

-60

V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current - Continuous

-2

A

T

J, 

T

STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

These devices are designed with high-current gain and
low saturation voltage with collector currents up to 2 A
continuous.

B

E

C