Fairchild Semiconductor N/A KSP10TA Data Sheet
Product codes
KSP10TA
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP
1
0
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage
3.0
V
P
C
Collector Power Dissipation (T
a
=25
°
C)
350
mW
Derate above 25
°
C
2.8
mW/
°
C
P
C
Collector Power Dissipation (T
C
=25
°
C)
1.0
W
Derate above 25
°
C
8.0
W/
°
C
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55~150
°
C
Rth(j-c)
Thermal Resistance, Junction to Case
125
°
C/W
Rth(j-a)
Thermal Resistance, Junction to Ambient
357
°
C/W
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=100
µ
A, I
E
=0
30
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=1mA, I
B
=0
25
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=10
µ
A, I
C
=0
3.0
V
I
CBO
Collector Cut-off Current
V
CB
=25V, I
E
=0
100
nA
I
EBO
Emitter Cut-off Current
V
EB
=2V, I
C
=0
100
nA
h
FE
DC Current Gain
V
CE
=10V, I
C
=4mA
60
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=4mA, I
B
=0.4mA
0.5
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=10V, I
C
=4mA
0.95
V
f
T
Current Gain Bandwidth Product
V
CE
=10V, I
C
=4mA, f=100MHz
650
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.7
pF
C
rb
Collector Base Feedback Capacitance
V
CB
=10V, I
E
=0, f=1MHz
0.35
0.65
pF
C
c·rbb´
Collector Base Time Constant
V
CB
=10V, I
C
=4mA,
f=31.8MHz
9.0
ps
KSP10
VHF/UHF transistor
1. Base 2. Emitter 3. Collector
TO-92
1