Kingston Technology ValueRAM memory 2 GB ( 2 x 1 GB ) DIMM 240-pin DDR3 KVR1066D3S8R7SK2/2GI Data Sheet
Product codes
KVR1066D3S8R7SK2/2GI
Memory Module Specifications
KVR1066D3S8R7SK2/2GI
2GB (1GB 128M x 72-Bit x 2 pcs.) PC3-8500
CL7 Registered w/Parity 240-Pin DIMM Kit
CL7 Registered w/Parity 240-Pin DIMM Kit
Kingston.com
Document No. VALUERAM0780-001.A00 05/09/09 Page 1
DESCRIPTION
ValueRAM’s KVR1066D3S8R7SK2/2GI is a kit of two 128M x
72-bit 1GB (1024MB) DDR3-1066 CL7 SDRAM (Synchronous
DRAM) registered w/parity, single-rank, Intel
72-bit 1GB (1024MB) DDR3-1066 CL7 SDRAM (Synchronous
DRAM) registered w/parity, single-rank, Intel
®
Compatibility
Tested, memory modules, based on nine 128M x 8-bit DDR3-
1066 FBGA components per module. Total kit capacity is 2GB
(2048MB). Each SPD is programmed to JEDEC standard
latency 1066Mhz timing of 7-7-7 at 1.5V. Each 240-pin DIMM
uses gold contact fingers and requires +1.5V. The electrical and
mechanical specifications are as follows:
1066 FBGA components per module. Total kit capacity is 2GB
(2048MB). Each SPD is programmed to JEDEC standard
latency 1066Mhz timing of 7-7-7 at 1.5V. Each 240-pin DIMM
uses gold contact fingers and requires +1.5V. The electrical and
mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
7 cycles
Row Cycle Time (tRCmin)
50.625ns (min.)
Refresh to Active/Refresh
110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
37.5ns (min.)
Power
2.452 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
Continued >>