STMicroelectronics Discovery kit for STM32L151/152 line - with STM32L152RC MCU STM32L152C-DISCO STM32L152C-DISCO Hoja De Datos
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STM32L152C-DISCO
DocID022799 Rev 6
STM32L15xCC STM32L15xRC STM32L15xUC STM32L15xVC
Electrical characteristics
111
6.3.7
Internal clock source characteristics
The parameters given in
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Table 31. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
f
HSI
Frequency
V
DD
= 3.0 V
-
16
-
MHz
TRIM
(1)(2)
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
HSI user-trimmed
resolution
resolution
Trimming code is not a multiple of 16
-
0.4
0.7
%
Trimming code is a multiple of 16
-
-
1.5
%
ACC
HSI
(2)
2. Based on characterization, not tested in production.
Accuracy of the
factory-calibrated
HSI oscillator
factory-calibrated
HSI oscillator
V
DDA
= 3.0 V, T
A
= 25 °C
-1
(3)
3. Tested in production.
-
%
V
DDA
= 3.0 V, T
A
= 0 to 55 °C
-1.5
-
1.5
%
V
DDA
= 3.0 V, T
A
= -10 to 70 °C
-2
-
2
%
V
DDA
= 3.0 V, T
A
= -10 to 85 °C
-2.5
-
2
%
V
DDA
= 3.0 V, T
A
= -10 to 105 °C
-4
-
2
%
V
DDA
= 1.65 V to 3.6 V
T
A
= -40 to 105 °C
-4
-
3
%
t
SU(HSI)
HSI oscillator
startup time
startup time
-
-
3.7
6
µs
I
DD(HSI)
HSI oscillator
power consumption
power consumption
-
-
100
140
µA
Table 32. LSI oscillator characteristics
Symbol
Parameter
Min
Typ
Max
Unit
f
LSI
(1)
1. Tested in production.
LSI frequency
26
38
56
kHz
D
LSI
(2)
2. This is a deviation for an individual part, once the initial frequency has been measured.
LSI oscillator frequency drift
0°C
T
A
85°C
-10
-
4
%
t
su(LSI)
(3)
3. Guaranteed by design, not tested in production.
LSI oscillator startup time
-
-
200
µs
I
DD(LSI)
LSI oscillator power consumption
-
400
510
nA