Fairchild Semiconductor N/A FMB3946 Hoja De Datos
Los códigos de productos
FMB3946
F
F
B3946
/ FMB39
4
6 — NP
N & P
N
P Ge
neral Purpos
e Amplifier
© 1999 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FFB3946 / FMB3946 Rev. 1.1.0
3
Electrical Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
μA, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
μA, I
C
= 0
5.0
V
I
CBO
Collector Cut-Off Current
V
CB
= 30 V, I
E
= 0
50
nA
I
EBO
Emitter Cut-Off Current
V
EB
= 4.0 V, I
C
= 0
50
nA
On Characteristics
h
FE
DC Current Gain
I
C
= 100
μA, V
CE
= 1.0 V
40
I
C
= 1.0 mA, V
CE
= 1.0 V
70
I
C
= 10 mA, V
CE
= 1.0 V
100
300
I
C
= 50 mA, V
CE
= 1.0 V
60
I
C
= 100 mA, V
CE
= 1.0 V
30
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.25
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
0.9
V
Small-Signal Characteristics
f
T
Current Gain-Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
200
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, f = 100 kHz
4.5
pF
C
ibo
Input Capacitance
V
CB
= 0.5 V, f = 100 kHz
10
pF