Bourns Ethernet PoE protection kit SMT 15 Parts PN-DESIGNKIT-35 Hoja De Datos

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PN-DESIGNKIT-35
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Features
 RoHS compliant*
  Low capacitance - 1 pF
  ESD protection >15 kV
  Protects 4 I/O and 1 VDD line
Applications
  HDMI 1.3 version
  PDAs and notebooks
 Consumer electronics
  Display port interface
  USB 2.0 up to 480 Mb/s
Thermal Characteristics (@ T
A
 = 25 °C Unless Otherwise Noted)
 
  CDSOT236-0504C - TVS/Steering Diode Array
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. 
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Parameter
Symbol
CDSOT236-0504C
Unit
Peak Pulse Current (tp = 8/20 µs)
I
PP
5.5
A
Storage Temperature
T
STG
-55 to +150
ºC
Operating Temperature
T
OPR
-55 to +85
ºC
Operating Supply Voltage
VDC
6
V
ESD per IEC 61000-4-2 (Air) (I/O Pins)
ESD per IEC 61000-4-2 (Contact) (I/O Pins)
VESD_IO
15
8
kV
ESD per IEC 61000-4-2 (Air) (VCC to GND)
ESD per IEC 61000-4-2 (Contact) (VCC to 
GND)
VESD_VCC
30
30
kV
DC Voltage at any I/O Pin
VIO
(GND-0.5) to (VCC+0.5)
V
General Information
The CDSOT236-0504C device provides ESD, EFT and Surge protection for high speed 
data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 
(Surge) requirements. The Transient Voltage Suppressor array offers a Working Peak 
Reverse Voltage of 5 V and Minimum Breakdown Voltage of 6 V. 
The SOT23-6 packaged device will mount directly onto the industry standard SOT23-6
footprint. Bourns
®
 Chip Diodes are easy to handle with standard pick and place 
equipment and their fl at confi guration minimizes roll away.
Electrical Characteristics (@ T
A
 = 25 °C Unless Otherwise Noted)
5
VDD
6
I/O 4
4
2
1
3
I/O 3
GND
I/O 1
1/O 2
Parameter
Symbol
CDSOT236-0504C
Unit
Maximum Reverse Standoff Voltage1 
V
RWM
5.0
V
Maximum Leakage Current1 @ VRWM
I
L
2.0
µA
Maximum Channel Leakage Current @ VRWM
I
CD
1.0
µA
Minimum Reverse Breakdown Voltage1 
@ IBV = 1 mA
VBR
6.0
V
Maximum Forward Voltage4 @ IF = 15 mA
VF
1.2
V
Maximum Clamping Voltage2 @ 5 A 8/20 µs
VC
10
V
Typical ESD Clamping Voltage - I/O2
Vclamp_io
14
V
Maximum Channel Input Capacitance2 @ 
VPIN5 = 5 V, VPIN2 = 0 V, VIN = 2.5 V, f = 1 
MHz
CIN
1.2
pF
Maximum Channel to Channel Input 
Capacitance3 @ VPIN5 = 5 V, VPIN2 = 0 V, 
VIN = 2.5 V, f = 1 MHz
CCROSS
0.12
pF
Maximum Variation of Channel Input 
Capacitance @ VPIN5 = 5 V, VPIN2 = 0 V, 
VIN = 2.5 V, f = 1 MHz (I/O Pin to GND)
ΔCIN
0.05
pF
NOTES:
1. Pin 5 to Pin 2 (GND) 
 
3. Between any two of Pins 1,3,4,6
2. Pin 1,3,4 or 6 to Pin 2 (GND) 
4. Pin 2 (GND) to Pin 5
*RoHS COMPLIANT