Kingston Technology KVR1333D3S8R9S/1GI Hoja De Datos
Memory Module Specifications
KVR1333D3S8R9S/1GI
1GB 128M x 72-Bit PC3-10600
CL9 Registered w/Parity 240-Pin DIMM
CL9 Registered w/Parity 240-Pin DIMM
Kingston.com
Document No. VALUERAM0846-001.A00 09/18/09 Page 1
DESCRIPTION
This document describes ValueRAM’s 128M x 72-bit 1GB
(1024MB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM)
registered w/parity, Intel
(1024MB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM)
registered w/parity, Intel
®
Compatibility Tested, single-rank
memory module, based on nine 128M x 8-bit DDR3-1333MHz
FBGA components. The SPD is programmed to JEDEC
standard latency 1333MHz timing of 9-9-9 at 1.5V. This 240-pin
DIMM uses gold contact fingers and requires +1.5V. The
electrical and mechanical specifications are as follows:
FBGA components. The SPD is programmed to JEDEC
standard latency 1333MHz timing of 9-9-9 at 1.5V. This 240-pin
DIMM uses gold contact fingers and requires +1.5V. The
electrical and mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power
2.137 W (operating)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
Continued >>