Fairchild Semiconductor N/A BC546CTA Fiche De Données
Codes de produits
BC546CTA
BC546 / BC547 / BC548 / BC549 / BC550
— NPN
E
p
p
it
ax
ial S
ial S
ilicon T
ra
n
sis
tor
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
h
FE
Classification
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
BC546
80
V
BC547 / BC550
50
BC548 / BC549
30
V
CEO
Collector-Emitter Voltage
BC546
65
V
BC547 / BC550
45
BC548 / BC549
30
V
EBO
Emitter-Base Voltage
BC546 / BC547
6
V
BC548 / BC549 / BC550
5
I
C
Collector Current (DC)
100
mA
P
C
Collector Power Dissipation
500
mW
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature Range
-65 to +150
°C
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-Off Current
V
CB
= 30 V, I
E
= 0
15
nA
h
FE
DC Current Gain
V
CE
= 5 V, I
C
= 2 mA
110
800
V
CE
(sat)
Collector-Emitter Saturation
Voltage
Voltage
I
C
= 10 mA, I
B
= 0.5 mA
90
250
mV
I
C
= 100 mA, I
B
= 5 mA
250
600
V
BE
(sat)
Collector-Base Saturation Voltage
I
C
= 10 mA, I
B
= 0.5 mA
700
mV
I
C
= 100 mA, I
B
= 5 mA
900
V
BE
(on)
Base-Emitter On Voltage
V
CE
= 5 V, I
C
= 2 mA
580
660
700
mV
V
CE
= 5 V, I
C
= 10 mA
720
f
T
Current Gain Bandwidth Product
V
CE
= 5 V, I
C
= 10 mA,
f = 100 MHz
300
MHz
C
ob
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1 MHz
3.5
6.0
pF
C
ib
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 1 MHz
9
pF
NF
Noise
Figure
Figure
BC546 / BC547 / BC548 V
CE
= 5 V, I
C
= 200
μA,
f = 1 kHz, R
G
= 2 k
Ω
2
10
dB
BC549 / BC550
1.2
4.0
BC549
V
CE
= 5 V, I
C
= 200
μA,
R
G
= 2 k
Ω, f = 30 to 15000 MHz
1.4
4.0
BC550
1.4
3.0
Classification
A
B
C
h
FE
110 ~ 220
200 ~ 450
420 ~ 800