Rohm Semiconductor FMG3AT148 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V FMG3AT148 Fiche De Données

EMG3 / UMG3N / FMG3A 

Transistors                                                                                                                                                                       

  

Rev.A 

2/2 

 
zElectrical characteristics (Ta = 25

°C) 

Parameter

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE (sat)

R

1

Min.

50

50

5

−
−

100

−

3.29

−
−
−
−
−

250

−

4.7

−
−
−

0.5

0.5

600

0.3

6.11

V

I

C

=50

µ

A

I

C

=1mA

I

E

=50

µ

A

V

CB

=50V

V

EB

=4V

V

CE

=5V, I

C

=1mA

−

I

C

/I

B

=5mA/0.25mA

V

V

µ

A

µ

A

−

V

k

Ω

Typ. Max. Unit

Conditions

f

T

−

250

−

V

CE

=10V, I

E

= 

−

5mA, f

=100MHz

MHz

∗

 

Transition frequency of the transistor

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Input resistance

 

 
 
zPackaging specifications   

Package

Code

TR

T148

3000

3000

Taping

Basic ordering 
unit (pieces)

UMG3N

T2R

8000

EMG3

FMG3A

Type

 

 
 
zElectrical characteristic curves 

DC  CURRENT  GAIN : h

FE

COLLECTOR  CURRENT : I

C

 (A)

V

CE

=

5V

100

µ

200

µ

500

µ

1m

2m

5m 10m 20m

50m100m

1k

500

200

100

50

20

10

5

2

1

Ta=100˚C

25˚C

−

40˚C

Fig.1  DC current gain vs. collector 

current

         

100

µ

200

µ

500

µ

1m

2m

5m

10m

20m

50m 100m

1

500m

200m

100m

50m

20m

10m

5m

2m

1m

COLLECTOR  SATURATION  VOLTAGE : V

CE (sat)

 (

V)

COLLECTOR  CURRENT : I

C

 (A)

Ta=100˚C

25˚C

−

40˚C

l

C

/l

B

=20

Fig.2  Collector-emitter saturation
          voltage vs. collector current