Nxp Semiconductors BU2523DF BU Transistor NPN SOT 199 11A 800V BU2523DF Fiche De Données
Codes de produits
BU2523DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.
envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
11
A
I
CM
Collector current peak value
-
29
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 5.5 A; I
B
= 1.1 A
-
5.0
V
I
Csat
Collector saturation current
f = 64 kHz
5.5
-
A
V
F
Diode forward voltage
I
F
= 5.5 A
-
2.2
V
t
f
Fall time
I
Csat
= 5.5 A; f = 64 kHz
0.15
0.3
µ
s
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
11
A
I
CM
Collector current peak value
-
29
A
I
B
Base current (DC)
-
7
A
I
BM
Base current peak value
-
10
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
175
mA
-I
BM
Reverse base current peak value
1
-
7
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
T
stg
Storage temperature
-55
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
1
2
3
case
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 1.200