Nxp Semiconductors BU2725DX BU Transistor NPN SOT 399 (TOP 3D) 12A 825V BU2725DX Fiche De Données
Codes de produits
BU2725DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand V
deflection circuits of colour television receivers. Designed to withstand V
CES
pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1700
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 7.0 A; I
B
= 1.75 A
-
1.0
V
I
Csat
Collector saturation current
f = 16 kHz
7.0
-
A
t
s
Storage time
I
Csat
= 7.0 A; f = 16kHz
5.8
6.5
µ
s
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1700
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
I
B
Base current (DC)
-
12
A
I
BM
Base current peak value
-
20
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
200
mA
-I
BM
Reverse base current peak value
1
-
9
A
P
tot
Total power dissipation
T
hs
≤
25 ˚C
-
45
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 k
Ω
)
case
1 2 3
b
c
e
Rbe
1 Turn-off current.
August 2002
1
Rev 2.000