Kingston Technology 8GB, 1333MHz, DDR3, ECC, Reg w/Par CL9 DIMM (Kit of 2) DR, x4 w/Therm Sensor KVR1333D3D4R9SK2/8G Scheda Tecnica

Memory Module Specifications

8GB (4GB 512M x 72-Bit x 2 pcs.) PC3-10600
CL9 Registered w/Parity 240-Pin DIMM Kit

Kingston.com

Document No. VALUERAM0862-001.A00    09/21/09   Page 1

ValueRAM’s KVR1333D3D4R9SK2/8G is a kit of two 512M x 
72-bit 4GB (4096MB) DDR3-1333MHz CL9 SDRAM (Synchro-
nous DRAM) registered w/parity, dual-rank memory modules, 
based on thirty-six 256M x 4-bit DDR3-1333MHz FBGA com-
ponents per module. Total kit capacity is 8GB. The SPDs are 
programmed to JEDEC standard latency 1333MHz timing of 
9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and 
requires +1.5V. The electrical and mechanical specifications are 
as follows:

•  JEDEC standard 1.5V ± 0.075V Power Supply
•  VDDQ = 1.5V ± 0.075V
•  667MHz fCK for 1333Mb/sec/pin
•  8 independent internal bank
•  Programmable CAS Latency: 6,7,8,9,10
•  Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•  Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
•  8-bit pre-fetch
•  Burst Length: 8 (Interleave without any limit, sequential with 

starting address “000” only), 4 with tCCD = 4 which does  
not allow seamless read or write [either on the fly using A12 
or MRS]

•  Bi-directional Differential Data Strobe
•  Internal(self) calibration : Internal self calibration through ZQ 

pin (RZQ : 240 ohm ± 1%)

•  On Die Termination using ODT pin
•  On-DIMM thermal sensor (Grade B)
•  Average Refresh Period 7.8us at lower than TCASE 85°C, 

3.9us at 85°C < TCASE ≤ 95°C

•  Asynchronous Reset
•  PCB : Height 1.18” (30.00mm), double sided component

CL(IDD)  

9 cycles

Row Cycle Time (tRCmin)  

49.5ns (min.)

Refresh to Active/Refresh  

110ns (min.) 

Command Time (tRFCmin)

Row Active Time (tRASmin)  

36ns (min.)

Power  

3.960 W (operating per module)

UL Rating  

94 V - 0

Operating Temperature  

0° C to 85° C

Storage Temperature  

-55° C to +100° C

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