Kingston Technology 8GB DDR3 1600MHz Kit KHX1600C9S3K2/8G Scheda Tecnica
Codici prodotto
KHX1600C9S3K2/8G
Memory Module Specifications
KHX1600C9S3K2/8G
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR3-1600MHz CL9 204-Pin SODIMM Kit
DDR3-1600MHz CL9 204-Pin SODIMM Kit
Kingston.com
Document No. 4805997-001.B00 07/18/11 Page 1
DESCRIPTION
Kingston’s KHX1600C9S3K2/8G is a kit of two 512M x 64-bit
(4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) mem-
ory modules, based on sixteen 256M x 8-bit DDR3 FBGA
components per module. Total kit capacity is 8GB. Each
module kit has been tested to run at DDR3-1600 at a low
latency timing of 9-9-9 at 1.5V. The SPDs are programmed
as specified in the Timing Parameters section. Each 204-pin
SODIMM uses gold contact fingers and requires +1.5V. The
electrical and mechanical specifications are as follows:
(4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) mem-
ory modules, based on sixteen 256M x 8-bit DDR3 FBGA
components per module. Total kit capacity is 8GB. Each
module kit has been tested to run at DDR3-1600 at a low
latency timing of 9-9-9 at 1.5V. The SPDs are programmed
as specified in the Timing Parameters section. Each 204-pin
SODIMM uses gold contact fingers and requires +1.5V. The
electrical and mechanical specifications are as follows:
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh
160ns
Command Time (tRFCmin)
Row Active Time (tRASmin)
33.75ns (min.)
Power
2.399 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10,11
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 8(DDR3-1600)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9,10,11
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 8(DDR3-1600)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.18” (30.00mm) double sided component
• RoHS Compliant
• PCB : Height 1.18” (30.00mm) double sided component
• RoHS Compliant
Continued >>
TIMING PARAMETERS
• DDR3-1600 CL9-9-9 @1.5V
• DDR3-1333 CL8-8-8 @1.5V
• DDR3-1066 CL6-6-6 @1.5V
• DDR3-1600 CL9-9-9 @1.5V
• DDR3-1333 CL8-8-8 @1.5V
• DDR3-1066 CL6-6-6 @1.5V