Fairchild Semiconductor N/A PZT3906 Scheda Tecnica

© 2010 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2

2 

(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

A

 = 25°C unless otherwise noted.

1. These ratings are based on a maximum junction temperature of 150

°C.

    These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed 

    or low-duty cycle operations.

Values are at T

A

 = 25°C unless otherwise noted.

2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

V

CEO

Collector-Emitter Voltage

-40

V

V

CBO

Collector-Base Voltage

-40

V

V

EBO

Emitter-Base Voltage

-5.0

V

I

C

Collector Current - Continuous

-200

mA

T

J, 

T

STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

(3)

(2)

(3)

P

D

Total Device Dissipation

625

350

1,000

mW

Derate Above 25

°C

5.0

2.8

8.0

mW/

°C

R

θJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W